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MICROWIND 2.0
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*
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* Rule File for CMOS 0.2µm (modified on 0.12µm version)
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*
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* Date : 27 Apr 99 created by Etienne Sicard
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* 04 Jan 00 smaller dt
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* 03 Avr 01 2d cross-section
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* 17 Apr 01 update params, add high voltage, tox, level3
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* 20 Apr 01 various lowK, 4 types of MOS
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* 10 Dec 01 Bsim4 model, gatek
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* 02 Jun 03 Bsim4 pmos model
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* 22 Apr 20 modified by iotcat for assignment purpose
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*
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NAME CMOS 0.2µm - 1 Metal
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*
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lambda = 0.2 (Lambda is set to half the gate size)
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metalLayers = 1 (Number of metal layers)
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edram = 0 (Embedded DRAM process)
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salicide = 0 (Enable salicide 1=enable 0= disable)
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*
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* Dielectrics
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*
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lowK = 3.1 (inter-metal oxide permittivity)
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gateK = 5.0 (HighK gate dielectric)
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*
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* Gate oxide thickness is defined in l3tox (Level3), b4toxe (Bsim4)
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* 2nm for core, 6nm for 2.5V I/O and analog
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*
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* Design rules associated to each layer
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*
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* Well
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*
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r101 = 10 (well width)
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r102 = 11 (well spacing)
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*
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* Diffusion
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*
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r201 = 4 (diffusion width)
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r202 = 4 (diffusion spacing)
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r203 = 3 (border of nwell on diffp)
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r204 = 5 (nwell to next diffn)
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r205 = 8 (diffn to diffp)
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r210 = 16 (Minimum diff surface lambda2)
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*
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* Poly
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*
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r301 = 2 (poly width)
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r302 = 2 (gate length)
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r303 = 4 (high voltage gate length)
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r304 = 3 (poly spacing)
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r305 = 1 (spacing poly and unrelated diff)
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r306 = 4 (width of drain and source diff)
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r307 = 2 (extra gate poly)
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r310 = 16 (Minimum poly surface lambda2)
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*
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* Contact
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*
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r401 = 2 (contact width)
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r402 = 4 (contact spacing)
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r403 = 1 (metal border for contact)
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r404 = 1 (poly border for contact)
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r405 = 1 (diff border for contact)
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r406 = 2 (contact to gate)
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r407 = 1 (poly2 border for contact)
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*
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* metal
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r501 = 3 (metal width)
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r502 = 3 (metal spacing)
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r510 = 16 (minimum surface)
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*
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* Pad rules
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*
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rp01 = 1330 (Pad width 80µm)
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rp02 = 1330 (Pad spacing 80µm)
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rp03 = 40 (Border of Vias)
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rp04 = 40 (Border of metals)
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rp05 = 200 (to unrelated active areas)
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*
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* Thickness of conductors for process aspect
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* All in µm
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*
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* P++ epitaxial
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thepi = 1.0
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heepi = -4.0
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*
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* Shallow tretch isolation
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thsti = 0.8
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hesti = -0.8
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*
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* Poly
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thpoly = 0.20
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hepoly = 0.01
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*
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* Poly2
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thp2 = 0.2
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hep2 = 0.22
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*
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* Diffusions
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thdn = 0.4
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thdp = 0.4
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thnw = 1.0
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*
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* Metallisation
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thme = 0.40
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heme = 1.1
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thm2 = 0.40
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hem2 = 2.0
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thm3 = 0.40
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hem3 = 2.9
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thm4 = 0.40
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hem4 = 3.8
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thm5 = 0.8
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hem5 = 4.8
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thm6 = 0.8
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hem6 = 6.0
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thpass = 0.3
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hepass = 7.0
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thnit = 0.2
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henit = 7.3
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*
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* Resistances Copper
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* Unit is ohm/square
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*
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repo = 4
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repu = 40
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r2po = 4
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r2pu = 40
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redn = 25
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reun = 250
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redp = 30
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reup = 300
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rep2 = 4
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reme = 0.05
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rem2 = 0.05
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rem3 = 0.05
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rem4 = 0.05
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rem5 = 0.03
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rem6 = 0.03
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*
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* Resistances vias: unit is ohm/via
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reco = 20
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revi = 2
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rev2 = 2
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rev3 = 2
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rev4 = 1
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rev5 = 1
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*
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*
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* Parasitic capacitances
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*
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cpoOxyde= 15000 (Surface capacitance Poly/Thin oxyde aF/µm2)
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cedram = 150000 (embedded Dram surface capacitance aF/µm2)
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cpobody = 400 (No lineic capa)
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cp2body = 400
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cmebody = 200 (Strong value due to upper and lower capa)
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cm2body = 180 (to metal grid i.e 2*Cg)
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cm3body = 160
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cm4body = 140
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cm5body = 120
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cm6body = 100
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cgsn = 500 ( Gate/source capa of nMOS)
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cgsp = 500
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cmelineic = 0
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cm2lineic = 0
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cm3lineic = 0
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cm4lineic = 0
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cm5lineic = 0
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cm6lineic = 0
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*
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* Vertical crosstalk
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*
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cmepoly = 60
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cp2poly = 1700
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cm2me = 100
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cm3m2 = 100
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cm4m3 = 100
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cm5m4 = 100
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cm6m5 = 100
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*
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* Lateral Crosstalk
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*
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cmextk = 30 (Lineic capacitance for crosstalk coupling in aF/µm)
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cm2xtk = 30 (C is computed using Cx=cmextk*l/spacing)
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cm3xtk = 30
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cm4xtk = 30
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cm5xtk = 40
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cm6xtk = 40
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*
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* Junction capacitances
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*
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cdnpwell = 350 (n+/psub)
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cdpnwell = 300 (p+/nwell)
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cnwell = 250 (nwell/psub)
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cpwell = 100 (pwell/nsub)
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cldn = 100 (Lineic capacitance N+/P- aF/µm)
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cldp = 100 (Idem for P+/N-)
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*
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* MOS definition
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*
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MOS1 low leakage
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MOS2 high speed
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MOS3 high voltage
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*
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* Nmos Model 3 parameters
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*
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NMOS
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l3vto = 0.4
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l3u0 = 0.06
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l3tox = 2e-9
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l3vmax = 120e3
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l3gamma = 0.4
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l3theta = 0.5
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l3kappa = 0.06
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l3phi = 0.2
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l3ld = 8e-9
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l3nss = 0.06
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*
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* high speed
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l3v2to = 0.3
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l3u2 = 0.06
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l3t2ox = 2e-9
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*
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* high voltage
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l3v3to = 0.7
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l3u3 = 0.06
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l3t3ox = 5e-9
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*
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* Pmos Model 3
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*
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PMOS
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l3vto = -0.45
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l3u0 = 0.02
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l3tox = 2.0e-9
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l3vmax = 110e3
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l3gamma = 0.4
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l3theta = 0.3
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l3kappa = 0.06
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l3phi = 0.2
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l3ld = 8e-9
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l3nss = 0.06
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*
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* high speed
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l3v2to = -0.3
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l3u2 = 0.02
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l3t2ox = 2.0e-9
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*
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* high voltage
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l3v3to = -0.7
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l3u3 = 0.02
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l3t3ox = 5e-9
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*
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* BSIM4 parameters
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*
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* Nmos
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*
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NMOS
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b4vtho = 0.4
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b4k1 = 0.45
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b4k2 = 0.1
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b4xj = 1.7e-7
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b4toxe = 2.0e-9
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b4ndep = 1.8e17
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b4d0vt = 2.3
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b4d1vt = 0.54
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b4vfb = -0.9
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b4u0 = 0.05
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b4voff = 0.05
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b4ua = 3e-15
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b4uc = -0.047e-15
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b4vsat = 100e3
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b4pscbe1 =230e6
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b4ute = -1.8
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b4kt1 = -0.06
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b4lint = 0.01e-6
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b4wint = 0.02e-6
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b4xj = 1.5e-7
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b4nfact = 1.6
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b4ndep = 1.7e17
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b4pclm = 1.1
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*
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* high speed
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b4v2to = 0.3
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b4l2int = 0.02e-6
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b4t2ox = 2.0e-9
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*
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* high voltage
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b4v3to = 0.7
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b4t3ox = 5e-9
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*
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* Pmos BSIM4
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*
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PMOS
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b4vtho = 0.45
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b4k1 = 0.45
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b4k2 = 0.1
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b4xj = 1.7e-7
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b4toxe = 2e-9
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b4ndep = 1.8e17
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b4d0vt = 2.3
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b4d1vt = 0.54
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b4vfb = -0.9
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b4u0 = 0.018
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b4ua = 1.5e-15
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b4voff = 0.05
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b4uc = -0.047e-15
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b4vsat = 60e3
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b4pscbe1 =230e6
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b4ute = -1.8
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b4kt1 = -0.06
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b4lint = 0.01e-6
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b4nfact = 1.6
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b4wint = 0.02e-6
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b4xj = 1.5e-7
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b4ndep = 1.7e17
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b4pclm = 0.7
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*
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* high speed
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b4v2to = 0.3
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b4l2int = 0.02e-6
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b4t2ox = 2e-9
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*
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* high voltage
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b4v3to = 0.7
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b4t3ox = 5e-9
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*
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* CIF Layers
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* MicroWind layer, CIF layer, overetch
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*
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cif nwell 1 0.0
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cif diffp 17 0.5
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cif diffn 16 0.5
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cif aarea 2 0.5
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cif poly 13 0.0
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cif contact 19 0.025
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cif metal 23 0.0125
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cif via 25 0.0125
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cif metal2 27 0.0125
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cif via2 32 0.0125
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cif metal3 34 0.0125
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cif via3 35 0.0125
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cif metal4 36 0.0125
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cif via4 52 0.0125
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cif metal5 53 0.0
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cif via5 54 0.0
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cif metal6 55 0.0
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cif passiv 31 0.0
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cif text 94 0.0
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*
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*
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* MicroWind simulation parameters
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*
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deltaT = 0.30e-12 (Minimum simulation interval dT)
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vdd = 4
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hvdd = 2.5
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temperature = 27
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riseTime = 0.025
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*
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* End CMOS 0.2µm
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*
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